參數(shù)資料
型號: M25P40
廠商: 意法半導體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 48/51頁
文件大小: 398K
代理商: M25P40
Part numbering
M25P40
48/51
12
Part numbering
Table 23.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST Sales Office.
The category of second-Level Interconnect is marked on the package and on the inner box
label, in compliance with JEDEC Standard JESD97. The maximum ratings related to
soldering conditions are also marked on the inner box label.
Ordering Information Scheme
Example:
M25P40
V MN
6
T
P
/X
Device Type
M25P = Serial Flash Memory for Code Storage
Device Function
40 = 4 Mbit (512K x 8)
Operating Voltage
V = V
CC
= 2.7 to 3.6V
Package
MN = SO8 (150 mil width)
MP = VFQFPN8 6x5mm (MLP8)
Device Grade
6 = Industrial temperature range, –40 to 85 °C.
Device tested with standard test flow
3
(1)
= Device tested with High Reliability Certified Flow
(2)
.
Automotive temperature range (–40 to 125 °C)
1.
Device grade 3 available in an SO8 ECOPACK (RoHS compliant) package.
2.
ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment.
The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801. Please ask your
nearest ST sales office for a copy.
Option
blank = Standard Packing
T = Tape and Reel Packing
Plating Technology
P or G = ECOPACK (RoHS compliant)
Process
(3)
/X = T7Y
3.
The process letter (/X) is specified in the ordering information of Grade 3 devices only.
For Grade 6 devices, the process letter does not appear in the Ordering Information, it only appears on
the device package (marking) and on the shipment box. Please contact your nearest ST Sales Office.
For more information on how to identify products by the Process Identification Letter, please refer to
AN1995: Serial Flash Memory Device Marking.
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M25PE10-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
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