參數(shù)資料
型號: M25P40
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 37/51頁
文件大?。?/td> 398K
代理商: M25P40
M25P40
DC and AC parameters
37/51
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC Characteristic tables that
follow are derived from tests performed under the Measurement Conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 10.
Table 11.
Table 12.
Operating Conditions
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
2.7
3.6
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Ambient Operating Temperature (Device Grade 3)
–40
125
Data Retention and Endurance
Parameter
Condition
Min.
Max.
Unit
Erase/Program
Cycles
Device Grade 6
100,000
cycles per sector
Device Grade 3
10,000
Data Retention
at 55°C
20
years
Capacitance
(1)
1.
Sampled only, not 100% tested, at T
A
=25°C and a frequency of 20MHz.
Symbol
Parameter
Test Condition
Min
.
Max
.
Unit
C
OUT
Output Capacitance (Q)
V
OUT
= 0V
8
pF
C
IN
Input Capacitance (other pins)
V
IN
= 0V
6
pF
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