參數(shù)資料
型號(hào): M16C30P
廠商: Renesas Technology Corp.
英文描述: SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
中文描述: 單片16位CMOS微機(jī)
文件頁(yè)數(shù): 26/57頁(yè)
文件大小: 583K
代理商: M16C30P
M16C/30P Group
5. Electrical Characteristics
Rev.1.22
REJ03B0088-0122
Mar 30, 2007
Page 26 of 53
NOTES:
1.
2.
Referenced to V
CC1
=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60
°
C (U3, U5) unless otherwise specified.
Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is 100, each block can be erased 100 times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.
(Rewrite prohibited)
Maximum number of E/W cycles for which operation is guaranteed.
Topr = -40 to 85
°
C (U3) / -20 to 85
°
C (U5).
3.
4.
Table 5.4
Flash Memory Version Electrical Characteristics
(1)
Symbol
Parameter
Standard
Typ.
Unit
Min.
100
(3)
Max.
t
PS
Program and Erase Endurance
(2)
Word Program Time (V
CC1
=5.0V
)
Lock Bit Program Time
Block Erase Time
(V
CC1
=5.0V
)
cycle
μ
s
μ
s
s
s
s
s
μ
s
year
25
25
0.3
0.3
0.5
0.8
200
200
4
4
4
4
15
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
Flash Memory Circuit Stabilization Wait Time
Data Hold Time
(4)
10
Table 5.5
Flash Memory Version Program / Erase Voltage and Read Operation Voltage
Characteristics
Flash Program, Erase Voltage
V
CC1
= 3.3 ± 0.3 V or 5.0 ± 0.5 (
T
opr
= 0
°
C to 60
°
C )
V
CC1
=2.7 to 5.5 V (
T
opr
= -40
°
C to 85
°
C (U3)
Flash Read Operation Voltage
-20
°
C to 85
°
C (U5))
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