參數(shù)資料
型號(hào)： M13S64164A-6BG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類(lèi)： DRAM
英文描述： 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
中文描述： 4M X 16 DDR DRAM, 0.7 ns, PBGA60
封裝： 13 X 8 MM, LEAD FREE, BGA-60
文件頁(yè)數(shù)： 31/49頁(yè)
文件大?。?/td> 1526K
代理商： M13S64164A-6BG
ES MT
Preliminary
M13S64164A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 0.3 31/49
Current State
CS
RAS CAS
WE
Address
Command
Action
H
X
X
X
X
DESEL
NOP (Idle after t
RP
)
L
H
H
H
X
NOP
NOP (Idle after t
RP
)
L
H
H
L
BA
Burst Stop
ILLEGAL
L
H
L
X
BA, CA, A10
READ/WRITE
ILLEGAL
L
L
H
H
BA, RA
Active
ILLEGAL
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
RE-FRESHING
L
L
L
L
Op-Code Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Idle after t
RP
)
L
H
H
H
X
NOP
NOP (Idle after t
RP
)
L
H
H
L
BA
Burst Stop
ILLEGAL
L
H
L
X
BA, CA, A10
READ / WRITE
ILLEGAL
L
L
H
H
BA, RA
Active
ILLEGAL
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
MODE
REGISTER
SETTING
L
L
L
L
Op-Code Mode-Add
MRS
ILLEGAL
ABBREVIATIONS :
H = High Level, L = Low level, V = Valid, X = Don’t Care
BA = Bank Address, RA =Row Address, CA = Column Address, NOP = No Operation
Note :
1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of the
bank.
3. Must satisfy bus contention, bus turn around and write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.
5. ILLEGAL of any bank is not idle.
6. Same bank’s previous auto precharg will not be performed. But if the bank is different, previous auto precharge will be
performed.
7. Refer to “Read with Auto Precharge: for more detailed information.
ILLEGAL = Device operation and / or data integrity are not guaranteed.
相關(guān)PDF資料
PDF描述
M13S64164A 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5BG 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5TG 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6TG 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M13S64164A-6BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64322A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Double Data Rate Synchronous DRAM
M-14 功能描述:TERM BARRIER 14CIRC DUAL ROW RoHS:是 類(lèi)別:連接器，互連式 >> 接線座 - 隔板塊 系列:M 標(biāo)準(zhǔn)包裝:10 系列:Beau™ 38780 端接塊類(lèi)型:阻隔塊 電路數(shù):15 導(dǎo)線入口數(shù)目:30 間距:0.438"（11.12mm） 行數(shù):2 電流:15A 電壓:300V 線規(guī):14-22 AWG 頂部端子:螺釘 底部端子:焊片 阻擋層類(lèi)型:雙壁（雙） 特點(diǎn):法蘭 顏色:黑 包裝:散裝 安裝類(lèi)型:通孔 工作溫度:- 材料 - 絕緣體:聚對(duì)苯二甲酸丁二酯（PBT），玻璃纖維增強(qiáng)型 材料可燃性額定值:UL94 V-0 其它名稱:038780-111538780-1115387801115
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