參數(shù)資料
型號(hào): M12L128324A-6TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 1M x 32 Bit x 4 Banks Synchronous DRAM
中文描述: 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
封裝: 0.400 INCH, LEAD FREE, TSOP2-86
文件頁數(shù): 47/47頁
文件大?。?/td> 794K
代理商: M12L128324A-6TG
ES MT
M12L128324A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2006
Revision
:
1.2
47/47
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reserves the right to change the products or specification in this document without
notice.
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rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To minimize
risks associated with customer's application, adequate design and operating
safeguards against injury, damage, or loss from such failure, should be provided by
the customer when making application designs.
ESMT's products are not authorized for use in critical applications such as, but not
limited to, life support devices or system, where failure or abnormal operation may
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described here are to be used for such kinds of application, purchaser must do its
own quality assurance testing appropriate to such applications.
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相關(guān)代理商/技術(shù)參數(shù)
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M12L128324A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM