- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄377718 > LT1910ES8 (LINEAR TECHNOLOGY CORP) Protected High Side MOSFET Driver PDF資料下載
參數(shù)資料
| 型號(hào)： | LT1910ES8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Protected High Side MOSFET Driver |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | 0.150 INCH, PLASTIC, SOP-8 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 178K |
| 代理商： | LT1910ES8 |
8
LT1910
sn1910 1910fs
supply at the same point as the positive end of the sense
resistor.
The drain sense threshold voltage has a positive tempera-
ture coefficient, allowing PTC sense resistors to be used
(see Printed Circuit Board Shunts). The selection of R
S
should be based on the minimum threshold voltage:
R
S
= 50mV/I
SET
Thus the 0.02
drain sense resistor in Figure 3 will yield
a minimum trip current of 2.5A. This simple configuration
is appropriate for resistive or inductive loads that do not
generate large current transients at turn-on.
Automatic Restart Period
The timing capacitor C
T
shown in Figure 3 determines the
length of time the power MOSFET is held off following a
current limit trip. Curves are given in the Typical Perfor-
mance Characteristics to show the restart period for
various values of C
T
. For example, C
T
= 0.33
μ
F yields a
50ms restart period.
Defeating Automatic Restart
Some applications are required to remain off after a fault
occurs. When the LT1910 is being driven from CMOS
logic, this can be easily implemented by connecting resis-
tor R2 between the IN and TIMER pins as shown in
Figure4. R2 supplies the sustaining current for an internal
SCR which latches the TIMER pin LOW under a fault
condition. The FAULT pin is set active LOW when the
TIMER pin falls below 3.3V. This keeps the MOSFET gate
from turning ON and the FAULT pin from resetting HIGH
until the IN pin has been recycled. C
T
is used to prevent the
FAULT pin from glitching whenever the IN pin recycles to
turn on the MOSFET unsuccessfully under an existing fault
condition.
Inductive vs Capacitive Loads
Turning on an inductive load produces a relatively benign
ramp in MOSFET current. However, when an inductive
load is turned off, the current stored in the inductor needs
somewhere to decay. A clamp diode connected directly
across each inductive load normally serves this purpose.
If a diode is not employed, the LT1910 clamps the MOSFET
gate 0.7V below ground. This causes the MOSFET to
resume conduction during the current decay with (V
+
+
V
GS
+ 0.7V) across it, resulting in high dissipation peaks.
Capacitive loads exhibit the opposite behavior. Any load
that includes a decoupling capacitor will generate a cur-
rent equal to C
LOAD
(
V/
t) during capacitor in-rush.
With large electrolytic capacitors, the resulting current
spike can play havoc with the power supply and false trip
the current sense comparator.
Turn-on
V/
t is controlled by the addition of the simple
network shown in Figure 5. This network takes advantage
of the fact that the MOSFET acts as a source follower
during turn-on. Thus the
V/
t on the source can be
controlled by controlling the
V/
t on the gate.
APPLICATIOU
W
U
U
IN
TIMER
FAULT
5V
FAULT OUTPUT
ON = 5V
OFF = 0V
R1
5.1k
LT1910
GND
1
1910 F04
4
R2
2k
CT
1
μ
F
2
3
5V
CMOS
LOGIC
Figure 4. Latch-Off Configuration (Autorestart Defeated)
V
+
SENSE
8
6
LT1910
1
GND
Q1
IRFZ34
15V
1N4744
C
LOAD
C2
50
μ
F
50V
1910 F05
R
0.01
+
+
C
D
R
D
(
≤
10k)
1N4148
24V
CURRENT LIMIT
DELAY NETWORK
C1
1N4148
R1
100k
R2
100k
V/
t CONTROL NETWORK
GATE
5
Figure 5. Control and Current Limit Delay
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LT1910 | Protected High Side MOSFET Driver |
| LT1920CS8 | Precision Instrumentation Amplifier |
| LT1920IN8 | Precision Instrumentation Amplifier |
| LT1920IS8 | Precision Instrumentation Amplifier |
| LT1920CN8 | Precision Instrumentation Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1910ES8#PBF | 功能描述:IC MOSFET DRIVER HIGH-SIDE 8SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類(lèi)型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF) |
| LT1910ES8#PBF | 制造商:Linear Technology 功能描述:IC MOSFET DRIVER HIGH SIDE 制造商:Linear Technology 功能描述:IC, MOSFET DRIVER, HIGH SIDE, SOIC-8 |
| LT1910ES8#TR | 功能描述:IC DRIVER MOSFET HI SIDE 8SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
| LT1910ES8#TRPBF | 功能描述:IC MOSFET DRIVER HIGH-SIDE 8SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類(lèi)型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱(chēng):835-1063 |
| LT1910ES8PBF | 制造商:Linear Technology 功能描述:MOSFET Driver 0.065V High-Side SOIC8 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。