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參數(shù)資料
| 型號(hào)： | LT1910ES8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Protected High Side MOSFET Driver |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | 0.150 INCH, PLASTIC, SOP-8 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 178K |
| 代理商： | LT1910ES8 |
11
LT1910
sn1910 1910fs
U
PACKAGE DESCRIPTIO
APPLICATIOU
The LT1910 gate drive is current limited for this purpose
so that no resistance is needed between the GATE pin and
zener.
Current sensing for protecting low side drivers can be
done in several ways. In the Figure 8a circuit, the supply
voltage for the load is assumed to be within the supply
operating range of the LT1910. This allows the load to be
returned to supply through current sense resistor R
S
,
providing normal operation of the LT1910 protection
circuitry.
W
U
U
If the load cannot be returned to supply through R
S
, or the
load supply voltage is higher than the LT1910 supply, the
current sense must be moved to the source of the low side
MOSFET.
Figure 8b shows an approach to source sensing. An
operational amplifier (must common mode to ground) is
used to level shift the voltage across R
S
up to the drain
sense pin. This approach allows the use of a small sense
resistor which could be made from PC trace material. The
LT1910 restart timer functions the same as in the high side
switch application.
S8 Package
8-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610)
.016 – .050
(0.406 – 1.270)
.010 – .020
(0.254 – 0.508)
×
45
°
0
°
– 8
°
TYP
.008 – .010
(0.203 – 0.254)
SO8 0303
.053 – .069
(1.346 – 1.752)
.014 – .019
(0.355 – 0.483)
TYP
.004 – .010
(0.101 – 0.254)
.050
(1.270)
BSC
1
2
3
4
.150 – .157
(3.810 – 3.988)
NOTE 3
8
7
6
5
.189 – .197
(4.801 – 5.004)
NOTE 3
.228 – .244
(5.791 – 6.197)
.245
MIN
.160
±
.005
RECOMMENDED SOLDER PAD LAYOUT
.045
±
.005
.050 BSC
.030
±
.005
TYP
INCHES
(MILLIMETERS)
NOTE:
1. DIMENSIONS IN
2. DRAWING NOT TO SCALE
3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LT1910 | Protected High Side MOSFET Driver |
| LT1920CS8 | Precision Instrumentation Amplifier |
| LT1920IN8 | Precision Instrumentation Amplifier |
| LT1920IS8 | Precision Instrumentation Amplifier |
| LT1920CN8 | Precision Instrumentation Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1910ES8#PBF | 功能描述:IC MOSFET DRIVER HIGH-SIDE 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LT1910ES8#PBF | 制造商:Linear Technology 功能描述:IC MOSFET DRIVER HIGH SIDE 制造商:Linear Technology 功能描述:IC, MOSFET DRIVER, HIGH SIDE, SOIC-8 |
| LT1910ES8#TR | 功能描述:IC DRIVER MOSFET HI SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1910ES8#TRPBF | 功能描述:IC MOSFET DRIVER HIGH-SIDE 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1910ES8PBF | 制造商:Linear Technology 功能描述:MOSFET Driver 0.065V High-Side SOIC8 |
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