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參數(shù)資料
| 型號： | LT1910ES8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Protected High Side MOSFET Driver |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | 0.150 INCH, PLASTIC, SOP-8 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 178K |
| 代理商： | LT1910ES8 |
7
LT1910
sn1910 1910fs
OPERATIOU
3.4V
1910 F01
0V
GATE
TIMER
FAULT
IN
OVERCURRENT
NORMAL
NORMAL
OFF
0V
0V
5V
0V
3.5V
2.9V
V
+
12V
Figure 1. Timing Diagram
APPLICATIOU
Input/Supply Sequencing
There are no input/supply sequencing requirements for
the LT1910. The IN pin may be taken up to 15V with the
supply at 0V. When the supply is turned on with the IN pin
set HIGH, the MOSFET turn-on will be inhibited until the
timing capacitor charges up to 2.9V (i.e., for one restart
cycle).
W
U
U
Isolating the Inputs
Operation in harsh environments may require isolation to
prevent ground transients from damaging control logic.
The LT1910 easily interfaces to low cost optoisolators.
The network shown in Figure 2 ensures that the input will
be pulled above 2V, but not exceed the absolute maximum
rating for supply voltages of 12V to 48V over the entire
temperature range. The optoisolator must have less than
20
μ
A of dark current (leakage) at hot in order to maintain
the OFF State (see Figure 2).
Drain Sense Configuration
The LT1910 uses supply referenced current sensing. One
input of the current sense comparator is connected to a
drain sense pin, while the second input is offset 65mV below
the supply inside the device. For this reason, Pin 8 of the
LT1910 must be treated not only as a supply pin, but also
as the reference input for the current sense comparator.
Figure 3 shows the proper drain sense configuration for
the LT1910. Note that the SENSE pin goes to the drain end
of the sense resistor, while the V
+
pin is connected to the
IN
51k
100k
2k
LOGIC
INPUT
12V TO 48V
LT1910
GND
POWER GROUND
LOGIC GROUND
1
1910 F02
4
Figure 2. Isolating the Input
FAULT
IN
TIMER
V
+
SENSE
GATE
3
4
2
8
6
5
LT1910
R1
5.1k
24V
5V
FAULT OUTPUT
INPUT
0V
GND
Q1
IRFZ34
24V
2A
SOLENOID
1910 F03
C1
100
μ
F
50V
C
T
1
μ
F
1
R
0.02
(PTC)
+
Figure 3. Drain Sense Configuration
相關PDF資料 |
PDF描述 |
|---|---|
| LT1910 | Protected High Side MOSFET Driver |
| LT1920CS8 | Precision Instrumentation Amplifier |
| LT1920IN8 | Precision Instrumentation Amplifier |
| LT1920IS8 | Precision Instrumentation Amplifier |
| LT1920CN8 | Precision Instrumentation Amplifier |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LT1910ES8#PBF | 功能描述:IC MOSFET DRIVER HIGH-SIDE 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:管件 產品目錄頁面:1381 (CN2011-ZH PDF) |
| LT1910ES8#PBF | 制造商:Linear Technology 功能描述:IC MOSFET DRIVER HIGH SIDE 制造商:Linear Technology 功能描述:IC, MOSFET DRIVER, HIGH SIDE, SOIC-8 |
| LT1910ES8#TR | 功能描述:IC DRIVER MOSFET HI SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1910ES8#TRPBF | 功能描述:IC MOSFET DRIVER HIGH-SIDE 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1910ES8PBF | 制造商:Linear Technology 功能描述:MOSFET Driver 0.065V High-Side SOIC8 |
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