參數(shù)資料
型號(hào)： LMX2331A
廠商： National Semiconductor Corporation
英文描述： PLLatinum⑩ Dual Frequency Synthesizer for RF Personal Communications
中文描述： PLLatinum⑩雙頻率合成射頻個(gè)人通信
文件頁(yè)數(shù)： 6/17頁(yè)
文件大?。?/td> 392K
代理商： LMX2331A
Charge Pump Current Specification Definitions
RF Sensitivity Test Block Diagram
DS012331-25
I1 = CP sink current at V
Do
= V
P
V
I2 = CP sink current at V
Do
= V
P
/2
I3 = CP sink current at V
Do
=
V
I4 = CP source current at V
Do
= V
P
V
I5 = CP source current at V
Do
= V
P
/2
I6 = CP source current at V
=
V
V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
CC
and ground. Typical values are between 0.5V and 1.0V.
3. I
Do
vs V
Do
=
Charge Pump Output Current magnitude variation vs Voltage =
[
1
2
*
{|I1| |I3|}]/[
1
2
*
{|I1| + |I3|}]
*
100%
and
[
1
2
*
{|I4| |I6|}]/[
1
2
*
{|I4| + |I6|}]
*
100%
4. I
Do-sink
vs I
Do-source
=
Charge Pump Output Current Sink vs Source Mismatch =
[|I2| |I5|]/[
1
2
*
{|I2| + |I5|}]
*
100%
5. I
Do
vs T
A
=
Charge Pump Output Current magnitude variation vs Temperature =
[|I2
@
temp| |I2
@
25C|]/|I2
@
25C|
*
100%
and
[|I5
@
temp| |I5
@
25C|]/|I5
@
25C|
*
100%
DS012331-28
Note:
N = 10,000 R = 50 P = 64
Note:
Sensitivity limit is reached when the error of the divided RF output, F
o
LD, is
≥
1 Hz.
www.national.com
6
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