參數(shù)資料
型號: LLE18100X
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN silicon planar epitaxial microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-437A, 3 PIN
文件頁數(shù): 5/9頁
文件大?。?/td> 60K
代理商: LLE18100X
November 1994
5
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
List of components (see bias circuit)
Notes
1.
2.
In thermal contact with TR1.
In thermal contact with D.U.T.
COMPONENT
DESCRIPTION
VALUE
CATALOGUE NO.
TR1
D1
transistor, BDT85 (or equivalent)
diode, BY239800 (or equivalent)
note 1
diode, BY239800
note 2
resistor
resistor
resistor
potentiometer, 10 turns (sfernice)
electrolytic capacitor
feedthrough bypass capacitor
5 turns 0.5 mm copper wire with ferrite bead
5 turns 0.5 mm copper wire
D2
R1
R2
R3
P1
C1
C5, C6
L1
L2
100
3.3 k
56
4.7 k
10
μ
F, 40 V
1500 pF
Erie, ref. 1250-003
Fig.4 Prematching test circuit board.
Dimensions in mm
Substrate : Epsilam 10
Thickness : 0.635 mm
Permittivity :
ε
r
= 10
handbook, full pagewidth
MCD660
1
5.5
0.635
0.7
0.7
11
2
6.5
3
1
2
3.2 2.3
6
6
0.635
3.2
4.9
30 mm
40 mm
30 mm
40 mm
input
output
3
1
9.1
3.5
5
1
11.5
10
2
3.4
3
0.7
0.7
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