參數(shù)資料
型號: LLE18100X
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN silicon planar epitaxial microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-437A, 3 PIN
文件頁數(shù): 3/9頁
文件大?。?/td> 60K
代理商: LLE18100X
November 1994
3
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature range
junction temperature
soldering temperature
open emitter
R
BE
= 220
open base
open collector
65
45
30
15
3
2
23
150
200
235
V
V
V
V
A
W
°
C
°
C
°
C
T
mb
= 75
°
C
t
10 s
note 1
Fig.2 DC SOAR.
T
mb
75
°
C
(1) Region of permissible DC operation
handbook, halfpage
10
2
10
1
1
VCE (V)
1
10
(1)
10
2
IC
(A)
MRA545
Fig.3
Maximum power dissipation derating as a
function of mounting base temperature.
P
tot
max = 23 W.
handbook, halfpage
(W)
0
5
10
15
20
25
0
50
100
150
200
Tmb (
o
C)
250
MRA544
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