參數(shù)資料
型號(hào): LLE18100X
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN silicon planar epitaxial microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-437A, 3 PIN
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 60K
代理商: LLE18100X
November 1994
4
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common emitter class AB amplifier (note 1).
Note
1.
The test circuit is split into 2 independant halves each being 30
×
40 mm in size.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 100
°
C
MAX.
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
4.2 K/W
0.2 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 20 V;
I
E
= 0
V
CE
= 30 V;
R
BE
= 220
V
CE
= 20 V;
I
B
= 0
V
EB
= 1.5 V;
I
C
= 0
V
CE
= 3 V;
I
C
= 1 A
1
mA
I
CER
collector cut-off current
10
mA
I
CEO
collector cut-off current
10
mA
I
EBO
emitter cut-off current
100
μ
A
h
FE
DC current gain
15
100
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(A)
P
L1
(W)
G
po
(dB)
Z
i
/Z
L
(
)
class AB (CW)
1.85
24
0.1
9;
typ. 11
8;
typ. 10
see Figs 8 and 9
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