參數(shù)資料
型號(hào): LET20030C
廠商: 意法半導(dǎo)體
英文描述: RF POWER TRANSISTORS Ldmos Enhanced Technology
中文描述: RF功率晶體管LDMOS的增強(qiáng)技術(shù)
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 37K
代理商: LET20030C
LET20030C
4/5
Controlling dimension: Inches
1022142E
M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA
mm
Inch
MIN.
TYP.
MAX
MIN.
TYP.
MAX
A
5.21
5.72
0.205
0.225
B
5.46
6.48
0.215
0.255
C
5.59
6.10
0.220
0.240
D
14.27
0.562
E
20.07
20.57
0.790
0.810
F
8.89
9.40
0.350
0.370
G
0.10
0.15
0.004
0.006
H
3.18
4.45
0.125
0.175
I
1.83
2.24
0.072
0.088
J
1.27
1.78
0.050
0.070
DIM.
相關(guān)PDF資料
PDF描述
LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET21004 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET21008 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology
LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LET20030S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET20045C 功能描述:射頻MOSFET電源晶體管 RF PWR trans Ldmost 2.0 GHz N-Ch ENH RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
LET21004 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET21008 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET21030C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology