參數(shù)資料
型號： LET21030C
廠商： 意法半導體
英文描述： RF POWER TRANSISTORS Ldmos Enhanced Technology
中文描述： RF功率晶體管LDMOS的增強技術
文件頁數(shù)： 1/4頁
文件大?。?/td> 62K
代理商： LET21030C
1/4
TARGET DATA
January, 24 2003
LET21030C
RF POWER TRANSISTORS
L
dmos
E
nhanced
T
echnology
Designed for GSM / EDGE / IS-97 / WCDMA
applications
EXCELLENT THERMAL STABILITY
P
OUT
= 30 W with 11 dB gain @ 2170 MHz
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
ESD PROTECTION
DESCRIPTION
The
LET21030C
is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.1
GHz. The
LET21030C
is designed for high gain and
broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
PIN CONNECTION
1. Drain
2. Gate
3. Source
1
2
3
CASE 465E–03, STYLE 1
epoxy sealed
ORDER CODE
LET21030C
BRANDING
LET21030C
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
-0.5 to +15
V
4
A
65
W
200
°
C
-65 to +200
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
2
°
C/W
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相關代理商/技術參數(shù)
參數(shù)描述
LET8180 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology
LET9002 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET9006 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET9045 功能描述:射頻MOSFET電源晶體管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
LET9045C 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 45W 18.5dB 960MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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