參數(shù)資料
型號(hào): LET21030C
廠商: 意法半導(dǎo)體
英文描述: RF POWER TRANSISTORS Ldmos Enhanced Technology
中文描述: RF功率晶體管LDMOS的增強(qiáng)技術(shù)
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 62K
代理商: LET21030C
LET21030C
4/4
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LET8180 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology
LET9002 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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LET9045 功能描述:射頻MOSFET電源晶體管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
LET9045C 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 45W 18.5dB 960MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray