參數(shù)資料
型號(hào)： LET8180
廠商： 意法半導(dǎo)體
英文描述： RF POWER TRANSISTORS Ldmos Enhanced Technology
中文描述： RF功率晶體管LDMOS的增強(qiáng)技術(shù)
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 33K
代理商： LET8180
1/4
TARGET DATA
January, 28 2003
LET8180
RF POWER TRANSISTORS
L
dmos
E
nhanced
T
echnology
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION,
PUSH-PULL
P
OUT
= 220 W with 17 dB TYP. gain @ 860 MHz
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
ESD PROTECTION
DESCRIPTION
The LET8180 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET8180 is designed for high gain and
broadband performance operating in common
source mode at 32 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
PIN CONNECTION
1
3
5
2
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
4
M252
epoxy sealed
ORDER CODE
LET8180
BRANDING
LET8180
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc =+70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
-0.5 to +15
V
18
A
289
W
200
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.45
°
C/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LET9002 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET9006 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET9045 功能描述:射頻MOSFET電源晶體管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
LET9045C 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 45W 18.5dB 960MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
LET9045C-01 制造商:STMicroelectronics 功能描述:RF POWER TRANSISTORTHE LDMOST FAMILY - Rail/Tube
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