參數(shù)資料
型號(hào): LET20030C
廠商: 意法半導(dǎo)體
英文描述: RF POWER TRANSISTORS Ldmos Enhanced Technology
中文描述: RF功率晶體管LDMOS的增強(qiáng)技術(shù)
文件頁數(shù): 1/5頁
文件大小: 37K
代理商: LET20030C
1/5
TARGET DATA
January, 24 2003
LET20030C
RF POWER TRANSISTORS
L
dmos
E
nhanced
T
echnology
Designed for GSM / EDGE / IS-97 applications
IS-97 CDMA PERFORMANCES
P
OUT
=
4.5 W
EFF. = 17 %
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 30 W with 11 dB gain @ 2000 MHz
ESD PROTECTION
DESCRIPTION
The LET20030C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.0 GHz.
The LET20030C is designed for high gain and
broadband performance operating in common
source mode at 26 V. It is ideal for base station
applications requiring high linearity.
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
DGR
Drain-Gate Voltage (R
GS
= 1 M
)
V
GS
Gate-Source Voltage
I
D
Drain Current
Parameter
Value
Unit
65
V
65
V
-0.5 to +15
V
4
A
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Max. Operating Junction Temperature
65
W
Tj
200
°
C
T
STG
Storage Temperature
-65 to +200
°
C
THERMAL DATA
(T
CASE
= 70
°
C)
R
th(j-c)
Junction -Case Thermal Resistance
2.0
°
C/W
M243
epoxy sealed
ORDER CODE
LET20030C
BRANDING
LET20030C
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
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