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參數(shù)資料
| 型號(hào)： | LET19060C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| 中文描述： | RF功率晶體管LDMOS的增強(qiáng)技術(shù) |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | LET19060C |
LET19060C
4/4
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LET20015 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET20030C | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET20030S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET21004 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET21008 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LET20015 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET20030C | 功能描述:射頻MOSFET電源晶體管 RF PWR Trans Ldmost Family RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET20030S | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET20045C | 功能描述:射頻MOSFET電源晶體管 RF PWR trans Ldmost 2.0 GHz N-Ch ENH RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET21004 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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