參數(shù)資料
型號: LET19060C
廠商: 意法半導(dǎo)體
英文描述: RF POWER TRANSISTORS Ldmos Enhanced Technology
中文描述: RF功率晶體管LDMOS的增強(qiáng)技術(shù)
文件頁數(shù): 3/4頁
文件大小: 34K
代理商: LET19060C
3/4
LET19060C
Ref. 1023153
M265 (.370 x .780 WIDE 2/L N/HERM W/FLG) MECHANICAL DATA
mm
Inch
MIN.
TYP.
MAX
MIN.
TYP.
MAX
A
12.57
12.83
.495
.505
B
4.32
5.33
.170
.210
C
9.65
9.91
.380
.390
D
19.61
20.02
.772
.788
E
33.91
34.16
1.335
1.345
F
0.08
0.15
.003
.006
G
0.89
1.14
.035
.045
H
1.45
1.70
.057
.067
I
3.18
4.32
.125
.170
J
9.27
9.53
.365
.375
K
27.69
28.19
1.090
1.110
L
3.00
3.51
.118
.138
DIM.
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參數(shù)描述
LET20015 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET20030C 功能描述:射頻MOSFET電源晶體管 RF PWR Trans Ldmost Family RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
LET20030S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET20045C 功能描述:射頻MOSFET電源晶體管 RF PWR trans Ldmost 2.0 GHz N-Ch ENH RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
LET21004 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package