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參數(shù)資料
| 型號： | LET19060C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| 中文描述： | RF功率晶體管LDMOS的增強(qiáng)技術(shù) |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 34K |
| 代理商： | LET19060C |
LET19060C
2/4
ELECTRICAL SPECIFICATION
(T
CASE
= 25
°
C)
STATIC
(Per Section)
Symbol
V
(BR)DSS
V
GS
= 0 V I
D
= 10
μ
A
I
DSS
V
GS
= 0 V V
DS
= 26 V
I
GSS
V
GS
= 5 V V
DS
= 0 V
V
GS(Q)
V
DS
= 26 V
V
DS(ON)
V
GS
= 10 V
G
FS
V
DS
= 10 V
C
ISS
*
V
GS
= 0 V
C
OSS
*
V
GS
= 0 V
C
RSS
V
GS
= 0 V
* Includes Internal Matching
ESD PROTECTION CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
65
V
6
μ
A
μ
A
1
I
D
= TBD
I
D
= 2 A
I
D
= 2 A
V
DS
= 26 V
V
DS
= 26 V
V
DS
= 26 V
2.5
4.5
V
0.27
V
4.7
mho
f = 1 MHz
TBD
pF
f = 1 MHz
TBD
pF
f = 1 MHz
TBD
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC
(f = 2000 MHz)
P
1dB
η
D(1)
V
DD
= 26 V I
DQ
= TBD
70
75
W
V
DD
= 26 V I
DQ
= TBD
45
50
%
Load
mismatch
V
DD
= 26 V I
DQ
= TBD P
OUT
= 60 W
ALL PHASE ANGLES
10:1
VSWR
DYNAMIC
(f = 1930 - 1990 MHz)
P
1dB
V
DD
= 26 V I
DQ
= TBD
60
65
W
G
P
η
D(1)
V
DD
= 26 V I
DQ
= TBD P
OUT
= 60 W
11
13
dB
V
DD
= 26 V I
DQ
= TBD
40
45
%
P
OUT(CDMA)(2)
885 KHz < -47 dBc
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
885 KHz < -47 dBc
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
7.5
W
η
D(CDMA)(2)
18
%
DYNAMIC
(f = 1805 - 1880 MHz)
P
1dB
V
DD
= 26 V I
DQ
= TBD
60
65
W
G
P
η
D(1)
V
DD
= 26 V I
DQ
= TBD P
OUT
= 60 W
11
13
dB
V
DD
= 26 V I
DQ
= TBD
45
%
P
OUT(EDGE)
400 KHz < -60 dBc
600 KHz < -70 dBc
400 KHz < -60 dBc
600 KHz < -70 dBc
(2) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
(1) 1 dB Compression point
EVM < 3 %
30
W
η
D(EDGE)
EVM < 3 %
25
%
Test Conditions
Class
2
M3
Human Body Model
Machine Model
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PDF描述 |
|---|---|
| LET20015 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET20030C | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET20030S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET21004 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LET20015 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET20030C | 功能描述:射頻MOSFET電源晶體管 RF PWR Trans Ldmost Family RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET20030S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET20045C | 功能描述:射頻MOSFET電源晶體管 RF PWR trans Ldmost 2.0 GHz N-Ch ENH RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET21004 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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