參數(shù)資料
型號(hào)： LET19060C
廠商： 意法半導(dǎo)體
英文描述： RF POWER TRANSISTORS Ldmos Enhanced Technology
中文描述： RF功率晶體管LDMOS的增強(qiáng)技術(shù)
文件頁數(shù)： 1/4頁
文件大?。?/td> 34K
代理商： LET19060C
1/4
TARGET DATA
January, 24 2003
LET19060C
RF POWER TRANSISTORS
L
dmos
E
nhanced
T
echnology
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
IS-97 CDMA PERFORMANCES
P
OUT
=
7.5 W
EFF. = 18 %
EDGE PERFORMANCES
P
OUT
=
30 W
EFF. = 25 %
GSM PERFORMANCES
P
OUT
=
65 W
EFF. = 45 %
EXCELLENT THERMAL STABILITY
BeO FREE PACKAGE
INTERNAL INPUT/OUTPUT MATCHING
ESD PROTECTION
DESCRIPTION
The LET19060C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET19060C is designed for high gain
and broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
PIN CONNECTION
1. Drain
2. Source
3. Gate
1
2
3
M265
epoxy sealed
ORDER CODE
LET19060C
BRANDING
LET19060C
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
-0.5 to +15
V
7
A
130
W
200
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.0
°
C/W
相關(guān)PDF資料
PDF描述
LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology
LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET21004 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET21008 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LET20015 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET20030C 功能描述:射頻MOSFET電源晶體管 RF PWR Trans Ldmost Family RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
LET20030S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET20045C 功能描述:射頻MOSFET電源晶體管 RF PWR trans Ldmost 2.0 GHz N-Ch ENH RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
LET21004 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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