參數(shù)資料
型號(hào): LE28DW3215AT-80
元件分類(lèi): EEPROM
英文描述: EEPROM
中文描述: EEPROM的
文件頁(yè)數(shù): 9/17頁(yè)
文件大?。?/td> 125K
代理商: LE28DW3215AT-80
32 Megabit FlashBank Memory
LE28DW3215AT-80
9
SANYO Electric Co., Ltd. Semiconductor Company 1-1-1 Sakata Oizumi Gunma Japan
R.0.00 (2002/2/6) No.XXXX -9/17
[ AC Characteristic ]
Read Cycle Timing Parameters
Symbol
Parameter
Min
Max
Units
T
RC
Read Cycle Time
80
ns
T
CE
CE# Access Time
80
ns
T
AA
Address Access Time
80
ns
T
OE
OE# Access Time
40
ns
T
CLZ
(1)
CE# Low to Active Output
0
ns
T
OLZ
(1)
OE# Low to Active Output
0
ns
T
CHZ
(1)
CE#High to High-Z Output
30
ns
T
OHZ
(1)
OE#High to High-Z Output
30
ns
T
OH
(1)
Output Hold from Address Change
0
ns
Write, Erase, Program Cycle, Timing Parameters
Symbol
Parameter
Min
Max
Units
T
BP
Word Program Time
20
us
T
SE
Sector Erase Time
25
ms
T
LE
Block Erase Time
25
ms
T
BE
Bank Erase Time
100
ms
T
AS
Address Setup Time
0
ns
T
AH
Address Hold Time
50
ns
T
CES
CE# Setup Time
0
ns
T
CEH
CE# Hold Time
0
ns
T
WES
WE# Setup Time
0
ns
T
WEH
WE# Hold Time
0
ns
T
OES
OE# High Setup Time
0
ns
T
OEH
OE# High Hold Time
0
ns
T
WP
WE# Puls Low Width
50
ns
T
WPH
WE# Puls High Time
30
ns
T
DS
Data Setup Time
50
ns
T
DH
Data Hold Time
0
ns
T
VDDR
(1)
VDD Rise Time
0.1
50
ms
T
IDA
ID READ / Exit Cycle Time
150
ns
Note (1): This Parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
相關(guān)PDF資料
PDF描述
LE28F4001AM
LE28F4001AM-15
LE28F4001ARS
LE28F4001ARS-15
LE28F4001ATS
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