參數(shù)資料
型號: LE28DW3215AT-80
元件分類: EEPROM
英文描述: EEPROM
中文描述: EEPROM的
文件頁數(shù): 15/17頁
文件大?。?/td> 125K
代理商: LE28DW3215AT-80
32 Megabit FlashBank Memory
LE28DW3215AT-80
15
SANYO Electric Co., Ltd. Semiconductor Company 1-1-1 Sakata Oizumi Gunma Japan
R.0.00 (2002/2/6) No.XXXX -15/17
AC test inputs are driven at VIHT (VDD*0.9) for a logic “1” and VILT (VDD*0.1) for a logic ”0” Measurement reference
points for inputs and outputs are at VHT (VDD*0.7) and VLT (VDD*0.3) input rise and fall times (10% to 90%) are<10ns.
Figure10: AC I/O Reference Waveforms
Figure11: A Test Load Example
V
IHT
V
ILT
INPUT
REFERENCE POINTS
V
HT
V
LT
V
HT
V
LT
OUTPUT
TO DUT
TO TESTER
C
L
V
DD
R
L LOW
R
L HIGH
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