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參數(shù)資料
| 型號： | LE28DW3215AT-80 |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 8/17頁 |
| 文件大?。?/td> | 125K |
| 代理商： | LE28DW3215AT-80 |
32 Megabit FlashBank Memory
LE28DW3215AT-80
8
SANYO Electric Co., Ltd. Semiconductor Company 1-1-1 Sakata Oizumi Gunma Japan
R.0.00 (2002/2/6) No.XXXX -8/17
[ Absolute Maximum Stress Ratings ]
Applied conditions greater then those listed under “absolute maximum Stress Ratings “may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.
Storage Temperature
D.C.Voltage on Any Pin to Ground Potential
Transient Voltage (<20ns) on Any Pin to Ground Potential
RESET# pin Voltage to Ground Potential
Package Power Dissipation Capability (Ta=25°C)
: -65°C to +150°C
: -0.5V to V
DD
+0.5V
: -1.0V to V
DD
+1.0V
: -0.5V to +13.0V
: 1.0W
[ Operating Range ]
Ambient Temperature
V
DD
: 0°C to +70°C
: 2.7V to 3.6V
[ AC condition of Test ]
Input Rise/Fall Time
Output Load (See Figures 10 and 11)
: 5ns
: C
L
=30pF
[ DC Operating Characteristics]
Symbol
Power Supply current
Read
Parameter
Min
Max
20
Unit
mA
Test Condition
I
DD
Erase / Program
Read+Erase / Program
40
60
mA
mA
CE#=V
IL
,WE#=V
IH
, I/O’s open,
Address Input=V
IL
/ V
IH
,at f=10MHz,
V
DD
=V
DD
(Max)
CE#=WE#=V
IL
,OE#=V
IH
, V
DD
=V
DD
(Max)
CE#=V
IL
,OE#=WE#=V
IH
,
Address Input=V
IL
/ V
IH
,at f=10MHz,
WE#=V
IH
, V
DD
=V
DD
(Max)
I
SB
Standby current
(CMOS input)
Input Leak current
Output Leak current
Input Low Voltage
Input Low Voltage(CMOS)
Input High Voltage
Input High Voltage(CMOS)
Output Low Voltage
Output High Voltage
40
uA
CE#=V
IHC
, V
DD
=V
DD
(Max)
I
LI
I
OL
V
IL
V
ILC
V
IH
V
IHC
V
OL
V
OH
10
10
uA
uA
V
V
V
V
V
V
V
IN
=V
SS
to V
DD
, V
DD
=V
DD
(Max)
V
OUT
= V
SS
to V
DD
, V
DD
=V
DD
(Max)
V
DD
*0.8
V
DD
-0.2
V
DD
*0.2
0.2
V
DD
-0.2
0.2
I
OL
=100uA , V
DD
=V
DD
(Min)
I
OH
=-100uA , V
DD
=V
DD
(Min)
[ Recommand System Power-up Timings ]
Symbol
T
PU
-READ
(1)
T
PU
-WRITE
(1)
Parameter
Max
200
200
Units
us
us
Power-up to Read Operation
Power-up to Write Operation
Note (1): This Parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
[ Capacitance (Ta=25°C, f=1MHz,other pins open) ]
Symbol
C
DQ
C
IN
Input Capacitance
Note (1): This Parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Parameter
Test Condition
V
DQ
=0V
V
IN
=0V
Max
12pF
6pF
(1)
(1)
I/O Pin Capacitance
[ Reliability Characteristic ]
Symbol
Parameter
Min Spec
10,000
100,000
(2)
10
Units
N
END
(1)
Endurance
Cycle / Sector
T
DR
(1)
Data Retention
Years
Note (1): This Parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Note (2): In case of Erase Verify Mode.
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