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參數(shù)資料
| 型號(hào)： | LBE2003S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-441A, 4 PIN |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 126K |
| 代理商： | LBE2003S |
1997 Mar 03
3
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S;
LCE2009S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CER
collector-base voltage
collector-emitter voltage
LBE2003S
LBE2009S; LCE2009S
collector-emitter voltage
emitter-base voltage
collector current (DC)
LBE2003S
LBE2009S; LCE2009S
total power dissipation
LBE2003S
LBE2009S; LCE2009S
storage temperature
operating junction temperature
soldering temperature
open emitter
40
V
R
BE
= 220
R
BE
= 100
open base
open collector
35
35
16
3
V
V
V
V
V
CEO
V
EBO
I
C
90
250
mA
mA
P
tot
T
mb
≤
75
°
C
65
1.4
3.5
+150
200
235
W
W
°
C
°
C
°
C
T
stg
T
j
T
sld
at 0.3 mm from case; t = 10 s
T
mb
≤
75
°
C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R
BE
≤
220
.
(3) Second breakdown limit (independent of temperature).
Fig.3 DC SOAR; LBE2003S.
handbook, halfpage
2
10
IC
(mA)
1
(1)
(2)
(3)
MGD996
10
VCE (V)
15
20
30
40
60
100
Fig.4
Power dissipation derating as a function of
mounting-base temperature; LBE2003S.
handbook, halfpage
Ptot
(W)
50
0
200
1.5
0.5
0
1
50
100
150
MGD989
Tmb (
o
C)
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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