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參數(shù)資料
| 型號(hào)： | LBE2003S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-441A, 4 PIN |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 126K |
| 代理商： | LBE2003S |
1997 Mar 03
10
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S;
LCE2009S
Microwave performance for LBE2009S; LCE2009S up to T
mb
= 75
°
C in a common emitter class-A test circuit; note 1.
Notes
1.
2.
3.
4.
Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
I
C
and V
CE
regulated.
Load power for 1 dB compressed power gain.
Low level power gain associated with P
L1
.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
(2)
I
C
(mA)
(2)
P
L1
(mW)
(3)
≥
700 (28.5)
typ. 900 (29.5)
G
po
(dB)
(4)
≥
9
typ. 9.8
Z
i
(
)
Z
L
(
)
Class-A (CW)
2
18
110
7.5 + j14.5
17.5 + j38.5
Fig.10 Prematching test circuit board for 2 GHz.
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (
ε
r
= 2.54); thickness: 0.8 mm.
handbook, full pagewidth
12.4
26.4
1.2
13
25
MGD999
2
6.8
5.2
0.8
2
2
2
input
VSWR
<
3.5
Zo = 50
output
VSWR
<
3
Zo = 50
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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