參數(shù)資料
型號: L6710
廠商: 意法半導體
英文描述: 6 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT
中文描述: 6位可編程雙相與動態(tài)VID管理控制器
文件頁數(shù): 25/34頁
文件大小: 1610K
代理商: L6710
25/34
L6710
after the pin and connected through Rg to the sense point (see Fig. 17). The PCB traces connecting
these resistors to the reading point must be routed as parallel traces in order to avoid the pick-up of any
common mode noise. It's also important to avoid any offset in the measurement and to get a better pre-
cision, to connect the traces as close as possible to the sensing elements, dedicated current sense re-
sistor or low side mosfet R
dsON
.
Moreover, when using the low side mosfet R
dsON
as current sense element, the ISENx pin is practically
connected to the PHASEx pin. DO NOT CONNECT THE PINS TOGETHER AND THEN TO THE HS
SOURCE! The device won't work properly because of the noise generated by the return of the high side
driver. In this case route two separate nets: connect the PHASEx pin to the HS Source (route together
with HGATEx) with a wide net (30 mils) and the ISENx pin to the LS Drain (route together with PGNDS).
Moreover, the PGNDS pin is always connected, through the Rg resistor, to the PGND: DO NOT CON-
NECT DIRECTLY TO THE PGND! In this case the device won't work properly. Route anyway to the LS
mosfet source (together with ISENx net).
Right and wrong connections are reported in Figure 18.
Symmetrical layout is also suggested to avoid any unbalance between the two phases of the converter.
Figure 18. PCB layout connections for sense nets.
EMBEDDING L6710-BASED VRMs…
When embedding the VRM into the application, additional care must be taken since the whole VRM is a
switching DC/DC regulator and the most common system in which it has to work is a digital system such
as MB or similar. In fact, latest MB has become faster and powerful: high speed data bus are more and
more common and switching-induced noise produced by the VRM can affect data integrity if not following
additional layout guidelines. Few easy points must be considered mainly when routing traces in which
switching high currents flow (switching high currents cause voltage spikes across the stray inductance of
the traces causing noise that can affect the near traces):
– When reproducing high current path on internal layers, please keep all layers the same size in order
to avoid "surrounding" effects that increases noise coupling.
– Keep safe guarding distance between high current switching VRM traces and data buses, especially
if high-speed data bus to minimize noise coupling.
– Keep safe guard distance or filter properly when routing bias traces for I/O sub-systems that must
walk near the VRD.
– Possible causes of noise can be located in the PHASE connections, Mosfet gate drive and Input volt-
age path (from input bulk capacitors and HS drain). Also PGND connections must be considered if
not insisting on a power ground plane. These connections, that can be possible sources of noise,
must be carefully kept far away from noise-sensitive data bus.
To LS Drain and Source
(or Sense Resistor)
To HS Gate and Source
(30 mils wide)
To HS Source
VIA to
GND Plane
NOT CORRECT
CORRECT
相關(guān)PDF資料
PDF描述
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