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參數(shù)資料
| 型號： | L6382D5 |
| 廠商： | 意法半導體 |
| 英文描述： | POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLAST |
| 中文描述： | 電源管理單元的微控鎮(zhèn)流器 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 206K |
| 代理商： | L6382D5 |
L6382D5
4/14
Table 3. Absolute Maximum Ratings
(*) excluding operating mode
Table 4. Thermal Data
N.
Pin
Function
18
CSO
Output of current sense comparator, compatible with 5V CMOS logic; during operating mode,
the pin is forced low whereas whenever the OC comparator is triggered (CSI> 0.55 typ.) the pin
latches high.
19
CSI
Input of current sense comparator, it is enabled only during operating mode when the pin
voltage exceeds the internal threshold, the CSO pin is forced high and the half bridge drivers
are disabled. It exits from this condition by either cycling the Vcc below the UVLO or with
LGI=HGI=low simultaneously.
20
VREF
Voltage reference. During operating mode an internal generator provides an accurate voltage
reference that can be used to supply up to 30mA to an external circuit. A small film capacitor
(0.22
μ
F min.), connected between this pin and GND is recommended to ensure the stability of
the generator and to prevent noise from affecting the reference.
Symbol
Pin
Parameter
Value
Unit
V
CC
10
IC supply voltage (I
CC
= 20mA)
Self-limited
V
HVSU
15
High voltage start-up generator voltage range
-0.3 to 600
V
V
BOOT
11
Floating supply voltage
-1 to V
HVSU
+V
CC
V
V
OUT
13
Floating ground voltage
-1 to 600
V
I
TPR(RMS)
6
Maximum TPR RMS current
±200
mA
I
TPR(PK)
6
Maximum TPR peak current
±600
mA
V
TPR
6
Maximum TPR voltage (*)
14
V
19
CSI input voltage
-0.3 to 7
V
1, 2, 3, 4
Logic input voltage
-0.3 to 7
V
9, 12, 17
Operating frequency
15 to 400
KHz
5
Operating frequency
15 to 600
KHz
Tstg
Storage Temperature
-40 to +150
°C
Tj
Ambient Temperature operating range
-40 to +125
°C
Symbol
Parameter
Value
Unit
R
th j-amb
Max. Thermal Resistance, Junction-to-ambient
120
°C/W
Table 2. Pin Functions
(continued)
相關PDF資料 |
PDF描述 |
|---|---|
| L6382D5TR | POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLAST |
| L6382D | Power management unit for microcontrolled ballast |
| L6382DTR | Power management unit for microcontrolled ballast |
| L6384 | High-Voltage Half Bridge Driver(高電壓半橋驅動器) |
| L6385 | High-Voltage High and Low Side Driver(高電壓高低邊驅動器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| L6382D5TR | 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
| L6382DTR | 功能描述:電池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| L6384 | 功能描述:功率驅動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384 | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER 6384 DIP8 |
| L6384D | 功能描述:功率驅動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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