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參數(shù)資料
| 型號： | L6382D5 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLAST |
| 中文描述： | 電源管理單元的微控鎮(zhèn)流器 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 206K |
| 代理商： | L6382D5 |
3/14
L6382D5
Table 2. Pin Functions
N.
Pin
Function
1
PFI
Digital input signal to control the PFC gate driver. This pin has to be connected to a 5V CMOS
compatible signal.
2
LSI
Digital input signal to control the half-bridge low side driver. This pin has to be connected to a
5V CMOS compatible signal.
3
HSI
Digital input signal to control the half-bridge high side driver. This pin has to be connected to a
5V CMOS compatible signal.
4
HEI
Digital input signal to control the HEG output. This pin has to be connected to a 5V CMOS
compatible signal.
5
PFG
PFC Driver Output. This pin must be connected to the PFC power MOSFET gate. A resistor
connected between this pin and the power MOS gate can be used to reduce the peak current.
An internal 10K
resistor toward ground avoids spurious and undesired MOSFET turn-on
The totem pole output stage is able to drive the power MOS with a peak current of 120mA
source and 250mA sink.
6
N.C.
Not connected
7
TPR
Input for two point regulator; by coupling the pin with a capacitor to a switching circuit, it is
possible to implement a charge circuit for the Vcc.
8
GND
Chip ground. Current return for both the low-side gate-drive currents and the bias current of the
IC. All of the ground connections of the bias components should be tied to a track going to this
pin and kept separate from any pulsed current return.
9
LSG
Low Side Driver Output. This pin must be connected to the gate of the half-bridge low side
power MOSFET. A resistor connected between this pin and the power MOS gate can be used
to reduce the peak current.
An internal 20K
resistor toward ground avoids spurious and undesired MOSFET turn-on.
The totem pole output stage is able to drive power with a peak current of 120mA source and
120mA sink.
10
Vcc
Supply Voltage for the signal part of the IC and for the drivers.
11
BOOT
High-side gate-drive floating supply Voltage. The bootstrap capacitor connected between this
pin and pin 13 (OUT) is fed by an internal synchronous bootstrap diode driven in phase with the
low-side gate-drive. This patented structure normally replaces the external diode.
12
HSG
High Side Driver Output. This pin must be connected to the gate of the half bridge high side
power MOSFET . A resistor connected between this pin and the power MOS gate can be used
to reduce the peak current.
An internal 20K
resistor toward OUT pin avoids spurious and undesired MOSFET turn-on
The totem pole output stage is able to drive the power MOS with a peak current of 120mA
source and 120mA sink.
13
OUT
High-side gate-drive floating ground. Current return for the high-side gate-drive current. Layout
carefully the connection of this pin to avoid too large spikes below ground.
14
N.C.
Not connected
15
HVSU
High-voltage start-up. The current flowing into this pin charges the capacitor connected
between pin Vcc and GND to start up the IC. Whilst the chip is in save mode, the generator is
cycled on-off between turn-on and save mode voltages. When the chip works in operating
mode the generator is shut down and it is re-enabled when the Vcc voltage falls below the
UVLO threshold. According to the required V
REF
pin current, this pin can be connected to the
rectified mains voltage either directly or through a resistor.
16
N.C.
High-voltage spacer. The pin is not connected internally to isolate the high-voltage pin and
comply with safety regulations (creepage distance) on the PCB.
17
HEG
Output for the HEI block; this driver can be used to drive the MOS employed in isolated
filaments preheating. An internal 20K
resistor toward ground avoids spurious and undesired
MOSFET turn-on.
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| L6382D5TR | POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLAST |
| L6382D | Power management unit for microcontrolled ballast |
| L6382DTR | Power management unit for microcontrolled ballast |
| L6384 | High-Voltage Half Bridge Driver(高電壓半橋驅(qū)動器) |
| L6385 | High-Voltage High and Low Side Driver(高電壓高低邊驅(qū)動器) |
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參數(shù)描述 |
|---|---|
| L6382D5TR | 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關(guān)頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
| L6382DTR | 功能描述:電池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| L6384 | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384 | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER 6384 DIP8 |
| L6384D | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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