![](http://datasheet.mmic.net.cn/370000/L6280_datasheet_16703415/L6280_4.png)
ELECTRICALCHARACTERISTICS
(V
S
= 20V; T
j
= 25
°
C; V
SS
= 5V; V
DHS
=15V; R
O
=165K
;
C
O
=680pF; unlessotherwise specified)
Symbol
I
DSS
V
s
V
INL
I
INL
V
INH
I
INH
V
ROUT
V
PF
I
S
V
SS
I
SS(IN)
I
SS(OUT)
f
osc
f
1
f
1max
f
2
f
3
Parameter
Test Condition
Fig. 1 V
DS
= 60V
Note 1,2
Min.
Typ.
Max.
2
48
1.35
-10
V
SS
10
0.8
13
7.5
5.25
7.5
800
96
Unit
mA
V
V
μ
A
V
μ
A
V
V
mA
V
mA
mA
KHz
KHz
KHz
KHz
KHz
Leakage Current
Power Supply Voltage
Low Level Input Voltage
Low Level Input Current
High Level Input Voltage
High Level Input Current
Low Level Reset Out
Power Supply Fail Voltage
Quiescent Supply Current
Logic Supply Voltage
Logic Supply Current
SMPS Out Current Range
Oscillator Frequency
SMPS and CH3 Frequency
Max SMPS Switching Frequency
PWM Frequency
High Side Driver Switching
Frequency
Thermal Shutdown
Monostable Watchdog Time
Reset Delay Time
ON State Drain Resistance
Transistor LSD CH1 - CH2
HSD CH1 - CH2
LSD CH3
HSD CH3
SMPS
Internal Sense LOW-Pass Filter
DAC Reference Voltage
DAC Resolution (3 Bit)
Discarge Time of Cosc
Capacitor (Minimum TON)
HSD Gates Voltage Drive
Pin 13 Overage Input Current
SMPS Overload Protection
Current
Pin 21 Overage Input Voltage
Logic V
SS
Fail Threshold Voltage
Internal Clamp Diode Forward
Voltage CH1/CH2
Internal Clamp Diode Forward
Voltage CH1/CH2
Internal Clamp Diode Forward
Voltage CH3
>V
PF
-0.3
3.15
I16 = 1.5mA
(Fig. 2)
V
S
= 12V
4.5
4.75
4.5
6
5
6
Note 3
64
80
f
osc
120
fosc/2
fosc/4
TSD
t
WD
t
D
R
ON
125
150
6.6
15.4
°
C
ms
ms
CWD = 0.22
μ
F (Note 4)
C
D
= 0.22
μ
F; Fig.2 (Note 5)
Fig 3; 4ab
2
1.1
0.5
0.5
1
300
1
Vref/8
0.4
2.4
1.4
0.8
0.8
1.2
500
ns
V
V
μ
s
SENSE
V
ref
DAC
t
C
D0=D1=D2 =1 (Table 1)
(See Table 1)
(Note 6)
V
DHS
I
DHS
13
15
3
17
V
mA
A
I
SS (OUT) max
1.2
V
DLS
V
SSF
12
V
V
V
(Fig. 2)
@ I
DS
= 0.4A (Fig. 5)
2.6
4.1
1.2
V
FHSD (1;2)
V
FLSD
(1AB;2AB)
V
FHSD
@ I
DS
= 0.4A (Fig. 5)
1.4
V
@ I
DS
= 1A (Fig. 5)
1.1
V
L6280
4/26