參數(shù)資料
型號: L29S800F
廠商: Electronic Theatre Controls, Inc.
英文描述: 8MEGABIT (1M】8 /512K】16) 3 VOLT CMOS FLASH MEMERY
中文描述: 8MEGABIT(100萬】8 / 16】為512k)3伏的CMOS閃存MEMERY
文件頁數(shù): 52/54頁
文件大?。?/td> 797K
代理商: L29S800F
L29S800F
PRELIMINARY
A
8MEGABIT (1M×8 /512K×16)
3 VOLT CMOS FLASH MEMERY
LinkSmart
!
52
071802
ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Min.
Typ.
Max.
Unit
Comments
Sector Erase Time
1
10
sec
Excludes programming time
prior to erasure
Word Programming Time
16
360
μ
s
Byte Programming Time
8
300
μ
s
Excludes system-level
overhead
Chip Programming Time
8.4
25
sec
Excludes system-level
overhead
Program/Erase Cycle
100,000
cycles
!
TSOP(I) PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
7.5
9.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
10
13
pF
Note: Test condition TA=25
, f=1.0MHz
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