參數(shù)資料
型號(hào)： L29S800F
廠商： Electronic Theatre Controls, Inc.
英文描述： 8MEGABIT (1M】8 /512K】16) 3 VOLT CMOS FLASH MEMERY
中文描述： 8MEGABIT（100萬(wàn)】8 / 16】為512k）3伏的CMOS閃存MEMERY
文件頁(yè)數(shù)： 2/54頁(yè)
文件大小： 797K
代理商： L29S800F
L29S800F
PRELIMINARY
A
8MEGABIT (1M×8 /512K×16)
3 VOLT CMOS FLASH MEMERY
LinkSmart
!
2
071802
FEATURES
Single 3.0 V read, program, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(I)
Minimum 100,000 program/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
One 8K word, two 4K words, one 16K word, and fifteen 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY )
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
Low V
CC
write inhibit
＜
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Sector protection
Hardware method disables any combination of sectors from program or erase operations
Sector Protection set function by Extended sector Protect command
Temporary sector unprotection
Temporary sector unprotection via the
RESET
pin
*:
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Mcro Devices, Inc.
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