參數(shù)資料
型號(hào)： L29S800F
廠商： Electronic Theatre Controls, Inc.
英文描述： 8MEGABIT (1M】8 /512K】16) 3 VOLT CMOS FLASH MEMERY
中文描述： 8MEGABIT（100萬(wàn)】8 / 16】為512k）3伏的CMOS閃存MEMERY
文件頁(yè)數(shù)： 28/54頁(yè)
文件大?。?/td> 797K
代理商： L29S800F
L29S800F
PRELIMINARY
A
8MEGABIT (1M×8 /512K×16)
3 VOLT CMOS FLASH MEMERY
LinkSmart
28
071802
■
DC CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max.
-1.0
+1.0
μ
A
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max.
-1.0
+1.0
μ
A
I
LIT
A
9
,
OE
,
RESET
Inputs Leakage
Current
V
CC
= V
CC
Max.
A
9
,
OE
,
RESET
= 12.5 V
—
35
μ
A
Byte
22
CE
= V
IL
,
OE
= V
IH
,
f=10 MHz
Word
Byte
Word
—
25
12
15
mA
I
CC1
V
CC
Active Current (Note 1)
CE
= V
IL
,
OE
= V
IH
,
f=5 MHz
—
mA
I
CC2
V
CC
Active Current (Note 2)
CE
= V
IL
,
OE
= V
IH
—
35
mA
I
CC3
V
CC
Current (Standby)
V
CC
= V
CC
Max.,
CE
= V
CC
± 0.3 V,
RESET
= V
CC
± 0.3 V
V
CC
= V
CC
Max.,
RESET
= V
SS
± 0.3 V
V
CC
= V
CC
Max.,
CE
= V
SS
± 0.3 V,
RESET
= V
CC
± 0.3 V
V
IN
= V
CC
± 0.3 V or V
SS
± 0.3 V
—
—
5
μ
A
I
CC4
V
CC
Current (Standby, Reset)
—
5
μ
A
I
CC5
V
CC
Current
(Automatic Sleep Mode) (Note 3)
—
5
μ
A
V
IL
Input Low Level
-0.5
0.6
V
V
IH
Input High Level
—
2.0
V
CC
+0.3
V
V
ID
Voltage for Autoselect and Sector
Protection (A
9
,
OE
RESET
)
(Note 4)
—
11.5
12.5
V
V
OL
Output Low Voltage Level
I
OL
= 4.0 mA, V
CC
= V
CC
Min.
0.45
V
V
OH1
I
OH
= –2.0 mA, V
CC
= V
CC
Min.
2.4
—
V
V
OH2
Output High Voltage Level
I
OH
= –100
μ
A
V
CC
–0.4
—
V
V
LKO
Low V
CC
Lock-Out Voltage
—
2.3
2.5
V
Notes:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent
component (at 10 MHz).
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. (V
ID
– V
CC
) do not exceed 9 V.
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