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參數(shù)資料
| 型號(hào)： | kw25n120 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速S-IGBT) |
| 中文描述： | 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù)（不擴(kuò)散技術(shù)中的快速第S - IGBT的） |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 380K |
| 代理商： | KW25N120 |
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Preliminary
SKW25N120
Power Semiconductors
1
Mar-00
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
G
C
E
40% lower
E
off
compared to previous generation
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Type
V
CE
I
C
E
off
T
j
Package
Ordering Code
SKW25N120
1200V
25A
2.9mJ
150
°
C
TO-247AC
Q67040-S4282
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V, 100V
≤
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
1200
V
A
46
25
I
Cpuls
-
84
84
I
F
42
25
I
Fpuls
V
GE
t
SC
80
±
20
10
V
μ
s
P
tot
313
W
T
j
,
T
stg
-
-55...+150
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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