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參數(shù)資料
| 型號： | kw25n120 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT 技術中的快速S-IGBT) |
| 中文描述： | 快速的S -不擴散核武器條約IGBT的技術（不擴散技術中的快速第S - IGBT的） |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 380K |
| 代理商： | KW25N120 |
Preliminary
SKW25N120
Power Semiconductors
2
Mar-00
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJC
0.4
R
thJCD
1.15
R
thJA
TO-247AC
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,
I
C
=1500
μ
A
V
GE
= 15V,
I
C
=25A
T
j
=25
°
C
T
j
=150
°
C
V
GE
=0V,
I
F
=25A
T
j
=25
°
C
T
j
=150
°
C
I
C
=1000
μ
A,
V
CE
=
V
GE
V
CE
=1200V,V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=1200V,
V
GE
=0V
V
CE
=20V,
I
C
=25A
1200
-
-
Collector-emitter saturation voltage
V
CE(sat)
2.5
-
3.1
3.7
3.6
4.3
Diode forward voltage
V
F
-
2.0
1.75
2.5
Gate-emitter threshold voltage
V
GE(th)
3
4
5
V
Zero gate voltage collector current
I
CES
-
-
-
-
350
1400
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
100
-
nA
S
20
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
2150
260
150
225
2600
310
180
300
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=25A
V
GE
=15V
TO-247AC
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
13
-
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
10
μ
s
100V
≤
V
CC
≤
1200V,
T
j
≤
150
°
C
-
240
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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