參數(shù)資料
型號(hào): kw25n120
廠商: SIEMENS AG
英文描述: Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速S-IGBT)
中文描述: 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù)(不擴(kuò)散技術(shù)中的快速第S - IGBT的)
文件頁(yè)數(shù): 6/13頁(yè)
文件大?。?/td> 380K
代理商: KW25N120
Preliminary
SKW25N120
Power Semiconductors
6
Mar-00
t
,
S
0A
20A
40A
60A
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
0
10
R
G
,
GATE RESISTOR
20
30
40
50
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 22
)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 25A)
t
,
S
-50°C
0°C
50°C
100°C
150°C
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 25A,
R
G
= 22
)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.3mA)
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