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參數(shù)資料
| 型號(hào)： | kw25n120 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速S-IGBT) |
| 中文描述： | 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù)（不擴(kuò)散技術(shù)中的快速第S - IGBT的） |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 380K |
| 代理商： | KW25N120 |
Preliminary
SKW25N120
Power Semiconductors
3
Mar-00
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
45
40
730
30
2.2
1.5
3.7
60
52
950
39
2.9
2.0
4.9
ns
T
j
=25
°
C,
V
CC
=800V,
I
C
=25A,
V
GE
=15/0V,
R
G
=22
,
Energy losses include
“tail” and diode
reverse recovery.
mJ
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
90
1.0
ns
Diode reverse recovery charge
μ
C
A
A/
μ
s
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
-
-
20
470
T
j
=25
°
C,
V
R
=800V,
I
F
=25A,
di
F
/dt
=650A/
μ
s
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
50
36
820
42
3.8
2.9
6.7
60
43
990
50
4.6
3.8
8.4
ns
T
j
=150
°
C
V
CC
=800V,
I
C
=25A,
V
GE
=15/0V,
R
G
=22
Energy losses include
“tail” and diode
reverse recovery.
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
280
4.3
ns
Diode reverse recovery charge
μ
C
A
A/
μ
s
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
-
-
32
130
T
j
=150
°
C
V
R
=800V,
I
F
=25A,
di
F
/dt
=750A/
μ
s
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