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參數(shù)資料
| 型號(hào)： | KM44V1004D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Dynamic RAM with Extended Data Out(1M x 4位CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| 中文描述： | 100萬(wàn)x 4位的擴(kuò)展數(shù)據(jù)輸出的CMOS動(dòng)態(tài)RAM（3米× 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶擴(kuò)展數(shù)據(jù)輸出）） |
| 文件頁(yè)數(shù)： | 6/22頁(yè) |
| 文件大?。?/td> | 399K |
| 代理商： | KM44V1004D |
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KM44C1004D, KM44V1004D
CMOS DRAM
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note1, 2)
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
t
DS
t
DH
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPT
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OLZ
t
OEH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
t
RASS
t
RPS
t
CHS
0
0
0
ns
9
Data hold time
8
10
15
ns
9
Refresh period (Normal)
16
16
16
ms
Refresh period (L-ver)
128
128
128
ms
Write command set-up time
0
0
0
ns
7
CAS to W delay time
32
32
42
ns
7
RAS to W delay time
67
77
92
ns
7
Column address to W delay time
42
47
57
ns
7
CAS precharge to W delay time
45
52
62
ns
7
CAS set-up time (CAS -before-RAS refresh)
5
5
5
ns
CAS hold time (CAS -before-RAS refresh)
10
10
15
ns
RAS to CAS precharge time
5
5
5
ns
CAS precharge time (C-B-R counter test cycle)
20
20
25
ns
Access time from CAS precharge
28
35
40
ns
3
Hyper Page mode cycle time
20
25
30
ns
15
Hyper Page read-modify-write cycle time
57
66
81
ns
CAS precharge time (Hyper Page cycle)
8
10
10
ns
RAS pulse width (Hyper Page cycle)
50
200K
60
200K
70
200K
ns
RAS hold time from CAS precharge
30
35
40
ns
OE access time
15
15
20
ns
OE to data delay
13
13
18
ns
Out put buffer turn off delay time from OE
3
13
3
13
3
18
ns
6,13
OE to output in low-Z
3
3
3
ns
OE command hold time
15
15
20
ns
Output data hold time
5
5
5
ns
Output buffer turn off delay time from RAS
3
15
3
15
3
20
ns
6,13
Output buffer turn off delay time from W
3
13
3
13
3
18
ns
6,13
W to data delay
13
13
18
ns
OE to RAS hold time
5
5
5
ns
CAS Hold time to OE
5
5
5
ns
OE precharge time
5
5
5
ns
W pulse width(hyper page cycle)
5
5
5
ns
RAS pulse width (C-B-R self refresh)
100
100
100
us
16,17,18
RAS precharge time width (C-B-R self refresh)
90
110
130
ns
16,17,18
CAS Hold time (C-B-R self refresh)
-50
-50
-50
ns
16,17,18
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44C1005D | 1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOS四 CAS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM44C16100B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| KM44C16104B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM44C16004B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM44C256A | 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
| KM44V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM470M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
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