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參數(shù)資料
| 型號： | KM44V1004D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Dynamic RAM with Extended Data Out(1M x 4位CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| 中文描述： | 100萬x 4位的擴展數(shù)據(jù)輸出的CMOS動態(tài)RAM（3米× 4位的CMOS動態(tài)隨機存儲器（帶擴展數(shù)據(jù)輸出）） |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 399K |
| 代理商： | KM44V1004D |
KM44C1004D, KM44V1004D
CMOS DRAM
This is a family of 1,048,576 x 4bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory
cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power),
and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh
and Hidden refresh capabilities.
This 1Mx4 Extended Data Out DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high band-width, low
power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and
high performance microprocessor systems.
Part Identification
- KM44C1004D/D-L(5V, 1K Ref.)
- KM44V1004D/D-L(3.3V, 1K Ref.)
Extended Data Out operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (3.3V, L-ver only)
Fast parallel test mode capability
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Early write or output enable controlled write
JEDEC Standard pinout
Available in 26(20)-pin SOJ 300mil and TSOP(II)
300mil packages
Single +5V
±
10% power supply(5V product)
Single +3.3V
±
0.3V power supply(3.3V product)
Control
Clocks
RAS
CAS
W
Vcc
Vss
DQ0
to
DQ3
Memory Array
1,048,576 x4
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
1M x 4Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh Period
Normal
L-ver
KM44C1004D
KM44V1004D
1K
16ms
128ms
Performance Range
Note) *1 : t
CAC
=15ns@3.3V device / 13ns@5V device
Speed
-5
-6
-7
t
RAC
50ns
60ns
70ns
t
CAC
t
RC
84ns
104ns
124ns
t
HPC
20ns
25ns
30ns
Remark
5V/3.3V
5V/3.3V
5V/3.3V
15/13ns
*1
15ns
20ns
Active Power Dissipation
Speed
-5
-6
-7
3.3V
234
220
200
5V
468
413
358
Unit : mW
S
Data out
Buffer
Data in
Buffer
OE
A0~A9
Col. Address Buffer
Row Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
Row Decoder
Column Decoder
VBB Generator
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| KM44C1005D | 1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOS四 CAS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM44C16100B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44C16104B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM44C16004B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM44C256A | 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
| KM44V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM470M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
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