- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374355 > KM44V1004D (SAMSUNG SEMICONDUCTOR CO. LTD.) 1M x 4Bit CMOS Dynamic RAM with Extended Data Out(1M x 4位CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) PDF資料下載
參數(shù)資料
| 型號： | KM44V1004D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Dynamic RAM with Extended Data Out(1M x 4位CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| 中文描述： | 100萬x 4位的擴展數(shù)據(jù)輸出的CMOS動態(tài)RAM（3米× 4位的CMOS動態(tài)隨機存儲器（帶擴展數(shù)據(jù)輸出）） |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 399K |
| 代理商： | KM44V1004D |
KM44C1004D, KM44V1004D
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
3.3V
5V
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-0.5 to +4.6
-1 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-0.5 to +4.6
-1 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°
C
Power Dissipation
P
D
600
600
mW
Short Circuit Output Current
I
OS
Address
50
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+1.3V/15ns(3.3V), V
CC
+2.0V/20ns(5V), Pulse width is measured at V
CC
*2 : -
1.3V/15ns(3.3V), -
2.0V/20ns(5V), Pulse width is measured at V
SS
Parameter
Symbol
3.3V
5V
Units
Min
Typ
Max
Min
Typ
Max
Supply Voltage
V
CC
3.0
3.3
3.6
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3
*1
0.8
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-0.3
*2
-
-0.1
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
3.3V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.3V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-2mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=2mA)
V
OL
-
0.4
V
5V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.5V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44C1005D | 1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOS四 CAS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM44C16100B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44C16104B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM44C16004B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM44C256A | 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
| KM44V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM470M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。