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參數(shù)資料
| 型號(hào)： | KM44V1004D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Dynamic RAM with Extended Data Out(1M x 4位CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| 中文描述： | 100萬x 4位的擴(kuò)展數(shù)據(jù)輸出的CMOS動(dòng)態(tài)RAM（3米× 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶擴(kuò)展數(shù)據(jù)輸出）） |
| 文件頁數(shù)： | 4/22頁 |
| 文件大小： | 399K |
| 代理商： | KM44V1004D |
KM44C1004D, KM44V1004D
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
I
CC6
and I
CC7,
address can be changed maximum once while RAS=V
IL
. In
I
CC4
, address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Recommend operating conditions unless otherwise noted.)
I
CC1
* : Operating Current (RAS and CAS cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : EDO Mode Current (RAS=V
IL
, CAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ0 ~ 3=Don
′
t Care, T
RC
=125us, T
RAS
=T
RAS
min~300ns
I
CCS
: Self refresh current
RAS=CAS=V
IL
, W=OE =A0 ~ A9=V
CC-
0.2V or 0.2V
DQ0 ~ DQ3=V
CC-
0.2V, 0.2V or OPEN
Symbol
Power
Speed
Max
Units
KM44V1004D
KM44C1004D
I
CC1
Don
′
t Care
-5
-6
-7
65
60
55
85
75
65
mA
mA
mA
I
CC2
Don
′
t Care
Don
′
t Care
1
2
mA
I
CC3
Don
′
t Care
-5
-6
-7
65
60
55
85
75
65
mA
mA
mA
I
CC4
Don
′
t Care
-5
-6
-7
65
60
55
85
75
65
mA
mA
mA
I
CC5
Normal
L
Don
′
t Care
0.5
100
1
200
mA
uA
I
CC6
Don
′
t Care
-5
-6
-7
65
60
55
85
75
65
mA
mA
mA
I
CC7
L
Donn
′
t Care
200
300
uA
I
CCS
L
Donn
′
t Care
150
-
uA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
| KM44V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM470M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
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