參數(shù)資料
型號: KM41C4000D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode(4M x 1位 CMOS動態(tài)RAM(帶快速頁模式))
中文描述: 4米× 1位的快速頁面模式的CMOS動態(tài)RAM(4米× 1位的CMOS動態(tài)隨機存儲器(帶快速頁模式))
文件頁數(shù): 6/20頁
文件大?。?/td> 324K
代理商: KM41C4000D
KM41C4000D, KM41V4000D
CMOS DRAM
AC CHARACTERISTICS
(0
°
C
T
A
70
°
C, See note 2)
Note) *1 : 5V only
Parameter
Symbol
-5
*1
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
t
DS
t
DH
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPT
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
WTS
t
WTH
t
WRP
t
WRH
t
RASS
t
RPS
t
CHS
0
0
0
ns
9
Data hold time
10
10
15
ns
9
Refresh period (Normal)
16
16
16
ms
Refresh period (L-ver)
128
128
128
ms
Write command set-up time
0
0
0
ns
7
CAS to W delay time
15
15
20
ns
7
RAS to W delay time
50
60
70
ns
7
Column address to W delay time
25
30
35
ns
7
CAS precharge to W delay time
30
35
40
ns
7
CAS set-up time (CAS-before-RAS refresh)
10
10
10
ns
CAS hold time (CAS-before-RAS refresh)
10
10
15
ns
RAS to CAS precharge time
5
5
5
ns
CAS precharge time (C-B-R counter test cycle)
20
20
25
ns
Access time from CAS precharge
30
35
40
ns
3
Fast Page mode cycle time
35
40
45
ns
Fast Page read-modify-write cycle time
53
60
70
ns
CAS precharge time (Fast Page cycle)
10
10
10
ns
RAS pulse width (Fast Page cycle)
50
200K
60
200K
70
200K
ns
RAS hold time from CAS precharge
30
35
40
ns
Write command set-up time (Test mode in)
10
10
10
ns
Write command hold time (Test mode in)
10
10
10
ns
W to RAS precharge time (C-B-R refresh)
10
10
10
ns
W to RAS hold time (C-B-R refresh)
10
10
10
ns
RAS pulse width (C-B-R self refresh)
100
100
100
us
14,15,16
RAS precharge time (C-B-R self refresh)
90
110
130
ns
14,15,16
CAS Hold time (C-B-R self refresh)
-50
-50
-50
ns
14,15,16
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