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參數(shù)資料
| 型號(hào)： | KM41C4000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode(4M x 1位 CMOS動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| 中文描述： | 4米× 1位的快速頁(yè)面模式的CMOS動(dòng)態(tài)RAM（4米× 1位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁(yè)模式）） |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大?。?/td> | 324K |
| 代理商： | KM41C4000D |
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KM41C4000D, KM41V4000D
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [D]
C
IN1
-
5
pF
Input capacitance [A0 ~ A10]
C
IN2
-
5
pF
Input capacitance [RAS, CAS, W]
C
IN3
-
7
pF
Output capacitance [Q]
C
OUT
-
7
pF
Test condition (5V device) : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : V
CC
=3.3V
±
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Note) *1 : 5V only
Parameter
Symbol
-5
*1
-6
7
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
90
110
130
ns
Read-modify-write cycle time
t
RWC
t
RAC
110
130
150
ns
Access time from RAS
50
60
70
ns
3,4,10
Access time from CAS
t
CAC
t
AA
15
15
20
ns
3,4,5
Access time from column address
25
30
35
ns
3,10
CAS to output in Low-Z
t
CLZ
t
OFF
0
0
0
ns
3
Output buffer turn-off delay
0
12
0
12
0
17
ns
6
Transition time (rise and fall)
t
T
t
RP
3
50
3
50
3
50
ns
2
RAS precharge time
30
40
50
ns
RAS pulse width
t
RAS
t
RSH
50
10K
60
10K
70
10K
ns
RAS hold time
15
15
20
ns
CAS hold time
t
CSH
t
CAS
50
60
70
ns
CAS pulse width
15
10K
15
10K
20
10K
ns
RAS to CAS delay time
t
RCD
t
RAD
20
35
20
45
20
50
ns
4
RAS to column address delay time
15
25
15
30
15
35
ns
10
CAS to RAS precharge time
t
CRP
t
ASR
5
5
5
ns
Row address set-up time
0
0
0
ns
Row address hold time
t
RAH
t
ASC
10
10
10
ns
Column address set-up time
0
0
0
ns
Column address hold time
t
CAH
t
RAL
10
10
15
ns
Column address to RAS lead time
25
30
35
ns
Read command set-up time
t
RCS
t
RCH
0
0
0
ns
Read command hold time referenced to CAS
0
0
0
ns
8
Read command hold time referenced to RAS
t
RRH
t
WCH
0
0
0
ns
8
Write command hold time
10
10
15
ns
Write command pulse width
t
WP
t
RWL
10
10
15
ns
Write command to RAS lead time
15
15
15
ns
Write command to CAS lead time
t
CWL
13
15
15
ns
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
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