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參數(shù)資料
| 型號(hào)： | KM41C4000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode(4M x 1位 CMOS動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| 中文描述： | 4米× 1位的快速頁(yè)面模式的CMOS動(dòng)態(tài)RAM（4米× 1位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁(yè)模式）） |
| 文件頁(yè)數(shù)： | 1/20頁(yè) |
| 文件大小： | 324K |
| 代理商： | KM41C4000D |
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KM41C4000D, KM41V4000D
CMOS DRAM
This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and
package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version.
This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per-
formance microprocessor systems.
Part Identification
- KM41C4000D/D-L(5V, 1K Ref.)
- KM41V4000D/D-L(3.3V, 1K Ref.)
Fast Page Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (3.3V, L-ver only)
Fast parallel test mode capability
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Common I/O using early write
JEDEC Standard pinout
Available in 26(20)-pin SOJ 300mil and TSOP(II)
300mil packages
+5V
±
10% power supply(5V product)
+3.3V
±
0.3V power supply(3.3V product)
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
RAS
CAS
W
Vcc
Vss
Memory Array
4,194,304 x1
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh Period
Normal
L-ver
KM41C4000D
KM41V4000D
1K
16ms
128ms
Performance Range
Speed
t
RAC
-5
50ns
-6
60ns
-7
70ns
t
CAC
15ns
15ns 110ns 40ns
20ns 130ns 45ns
t
RC
90ns
t
PC
35ns
Remark
5V only
5V/3.3V
5V/3.3V
Active Power Dissipation
Speed
-5
-6
-7
3.3V
-
220
200
5V
470
415
360
Unit : mW
S
Data out
Buffer
Data in
Buffer
Q
A0~A9
D
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