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參數(shù)資料
| 型號(hào)： | KM41C4000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode(4M x 1位 CMOS動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| 中文描述： | 4米× 1位的快速頁(yè)面模式的CMOS動(dòng)態(tài)RAM（4米× 1位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁(yè)模式）） |
| 文件頁(yè)數(shù)： | 4/20頁(yè) |
| 文件大?。?/td> | 324K |
| 代理商： | KM41C4000D |
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KM41C4000D, KM41V4000D
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
I
CC6
and I
CC7,
address can be changed maximum once while RAS=V
IL
. In
I
CC4
, address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Recommend operating conditions unless otherwise noted.)
I
CC1
* : Operating Current (RAS and CAS cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, CAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ=Don
′
t Care, T
RC
=125us(L-ver.), T
RAS
=T
RAS
min~300ns
I
CCS
: Self refresh current
RAS=CAS=V
IL
, W=OE =A0 ~ A10=D=V
CC-
0.2V or 0.2V
Symbol
Power
Speed
Max
Units
KM41V4000D
KM41C4000D
I
CC1
Don
′
t Care
-5
-6
-7
-
60
55
85
75
65
mA
mA
mA
I
CC2
Don
′
t Care
Don
′
t Care
1
2
mA
I
CC3
Don
′
t Care
-5
-6
-7
-
60
55
85
75
65
mA
mA
mA
I
CC4
Don
′
t Care
-5
-6
-7
-
45
40
65
55
45
mA
mA
mA
I
CC5
Normal
L
Don
′
t Care
0.5
100
1
200
mA
uA
I
CC6
Don
′
t Care
-5
-6
-7
-
60
55
85
75
65
mA
mA
mA
I
CC7
L
Don
′
t Care
200
300
uA
I
CCS
L
Don
′
t Care
150
-
uA
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