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參數(shù)資料
| 型號： | KM41C16000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 1,600 x1Bit的CMOS動態(tài)隨機存儲器的快速頁面模式（1,600 x1位的CMOS動態(tài)隨機存儲器（帶快速頁模式）） |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 293K |
| 代理商： | KM41C16000C |
CMOS DRAM
KM41C16000C, KM41V16000C
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-5
-6
Units
Notes
Min
Max
Min
Max
Data set-up time
t
DS
t
DH
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
WTS
t
WTH
t
WRP
t
WRH
t
RASS
t
RPS
t
CHS
0
0
ns
9
Data hold time
10
10
ns
9
Refresh period (Normal)
64
64
ms
Refresh period (L-ver)
128
128
ms
Write command set-up time
0
0
ns
7
CAS to W delay time
13
15
ns
7
RAS to W delay time
50
60
ns
7
Column address to W delay time
25
30
ns
7
CAS precharge to W delay time
30
35
ns
CAS set-up time (CAS -before-RAS refresh)
5
5
ns
CAS hold time (CAS -before-RAS refresh)
10
10
ns
RAS to CAS precharge time
5
5
ns
Access time from CAS precharge
30
35
ns
3
Fast Page mode cycle time
35
40
ns
Fast Page read-modify-write cycle time
53
60
ns
CAS precharge time (Fast Page cycle)
10
10
ns
RAS pulse width (Fast Page cycle)
50
200K
60
200K
ns
RAS hold time from CAS precharge
30
35
ns
Write command set-up time (Test mode in)
10
10
ns
11
Write command hold time (Test mode in)
10
10
ns
11
W to RAS precharge time(C-B-R refresh)
10
10
ns
W to RAS hold time(C-B-R refresh)
10
10
ns
RAS pulse width (C-B-R self refresh)
100
100
us
13,14,15
RAS precharge time (C-B-R self refresh)
90
110
ns
13,14,15
CAS hold time (C-B-R self refresh)
-50
-50
ns
13,14,15
相關(guān)PDF資料 |
PDF描述 |
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| KM41V16000C | 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| KM41C4000D | 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode(4M x 1位 CMOS動態(tài)RAM(帶快速頁模式)) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM41C16000CK-6T | 制造商:Samsung Semiconductor 功能描述: |
| KM41C256P-8 | 制造商:Samsung Semiconductor 功能描述: |
| KM41C4000D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 1Bit CMOS Dynamic RAM with Fast Page Mode |
| KM41C464P-10 | 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 64K x 4, 18 Pin, Plastic, DIP 制造商:Samsung Semiconductor 功能描述:Dynamic RAM, Fast Page, 64K x 4, 18 Pin, Plastic, DIP |
| KM41C464P-8 | 制造商:Samsung Semiconductor 功能描述:Dynamic RAM, Fast Page, 64K x 4, 18 Pin, Plastic, DIP |
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