參數(shù)資料
型號(hào)： KM41C16000C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動(dòng)態(tài)RAM(帶快速頁模式))
中文描述： 1,600 x1Bit的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁面模式（1,600 x1位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁模式））
文件頁數(shù)： 4/19頁
文件大?。?/td> 293K
代理商： KM41C16000C
CMOS DRAM
KM41C16000C, KM41V16000C
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time, t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS cycling @t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, CAS, Address cycling @t
PC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ=Don
′
t care, T
RC
=31.25us(L-ver), T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=CAS=0.2V, W=A0 ~ A11=V
CC
-0.2V or 0.2V,
D, Q=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM41V16000C
90
80
1
1
90
80
90
80
0.5
200
90
80
200
150
KM41C16000C
90
80
2
1
100
90
90
80
1
250
100
90
300
250
I
CC1
Don
′
t care
-5
-6
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
uA
uA
I
CC2
Normal
L
Don
′
t care
I
CC3
Don
′
t care
-5
-6
-5
-6
I
CC4
Don
′
t care
I
CC5
Normal
L
Don
′
t care
I
CC6
Don
′
t care
-5
-6
I
CC7
I
CCS
L
L
Don
′
t care
Don
′
t care
相關(guān)PDF資料
PDF描述
KM41V16000C 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動(dòng)態(tài)RAM(帶快速頁模式))
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