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參數(shù)資料
| 型號： | KM41C16000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 1,600 x1Bit的CMOS動態(tài)隨機存儲器的快速頁面模式（1,600 x1位的CMOS動態(tài)隨機存儲器（帶快速頁模式）） |
| 文件頁數(shù)： | 1/19頁 |
| 文件大?。?/td> | 293K |
| 代理商： | KM41C16000C |
CMOS DRAM
KM41C16000C, KM41V16000C
This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5 or -6), power consumption(Normal or Low power) and
package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
This 16Mx1 Fast Page Mode DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high band-width, low
power consumption and high reliability. It may be used as main memory unit for high level computer and microcomputer.
Part Identification
- KM41C16000C/C-L (5V, 4K Ref.)
- KM41V16000C/C-L (3.3V, 4K Ref.)
Fast Page Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
Fast Parallel test mode capability
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Early Write Operation
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
Single +5V
±
10% power supply (5V product)
Single +3.3V
±
0.3V power supply (3.3V product)
Control
Clocks
RAS
CAS
W
Vcc
Vss
A0-A11
Memory Array
16,777,216 x1
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
16M x1Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Normal
L-ver
C16000C
V16000C
5V
3.3V
4K
64ms
128ms
Performance Range
Speed
t
RAC
-5
50ns
-6
60ns
t
CAC
13ns
15ns
t
RC
90ns
110ns
t
PC
35ns
40ns
Remark
5V/3.3V
5V/3.3V
Active Power Dissipation
Speed
-5
-6
3.3V
324
288
5V
495
440
Unit : mW
S
Data out
Buffer
Data in
Buffer
D
Q
Col. Address Buffer
Row Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
Column Decoder
Row Decoder
VBB Generator
A0-A11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM41V16000C | 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| KM41C4000D | 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode(4M x 1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| KM4200IC8 | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| KM4200IC8TR3 | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| KM4200 | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM41C16000CK-6T | 制造商:Samsung Semiconductor 功能描述: |
| KM41C256P-8 | 制造商:Samsung Semiconductor 功能描述: |
| KM41C4000D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 1Bit CMOS Dynamic RAM with Fast Page Mode |
| KM41C464P-10 | 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 64K x 4, 18 Pin, Plastic, DIP 制造商:Samsung Semiconductor 功能描述:Dynamic RAM, Fast Page, 64K x 4, 18 Pin, Plastic, DIP |
| KM41C464P-8 | 制造商:Samsung Semiconductor 功能描述:Dynamic RAM, Fast Page, 64K x 4, 18 Pin, Plastic, DIP |
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