參數(shù)資料
型號: KM4132G271BTQ(R)-10
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
中文描述: 128K的x 32位× 2銀行同步圖形RAM的LVTTL
文件頁數(shù): 41/51頁
文件大?。?/td> 1033K
代理商: KM4132G271BTQ(R)-10
KM4132G271B
CMOS SGRAM
- 41
Rev. 2.4 (May 1998)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Read Interrupted by Precharge Command & Read Burst Stop Cycle (@Full page Only)
HIGH
Row Active
(A-Bank)
*Note :
1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQ
s after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1, 2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of "Full page write burst stop cycle".
3. Burst stop is valid at full page mode.
*Note 1
Precharge
(A-Bank)
Burst Stop
Read
(A-Bank)
Read
(A-Bank)
1
2
1
2
A
9
A
8
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
QAa0
QAa1
QAa2
QAa3
QAa4
QAa0
QAa1
QAa2
QAa3
QAa4
QAb0
QAb1
QAb2
QAb3
QAb4
QAb5
QAb0
QAb1
QAb2
QAb3
QAb4
QAb5
RAa
CAa
CAb
RAa
*Note 1
DSF
*Note 2
: Don
t care
(CL=2)
(CL=3)
DQ
DQ
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