參數(shù)資料
型號: KM4132G271BTQ(R)-10
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
中文描述: 128K的x 32位× 2銀行同步圖形RAM的LVTTL
文件頁數(shù): 20/51頁
文件大?。?/td> 1033K
代理商: KM4132G271BTQ(R)-10
KM4132G271B
CMOS SGRAM
- 20
Rev. 2.4 (May 1998)
t
CCD Note 2
t
CDL
Note 3
t
CCD Note 2
t
CDL
Note 3
1. By " Interrupt ", It is possible to stop burst read/write by external command before the end of burst.
By "CAS Interrupt" , to stop burst read/write by CAS access ; read, write and block write.
2. t
CCD
: CAS to CAS delay. (=1CLK)
3. t
CDL
: Last data in to new column address delay. (=1CLK)
4. Pixel :Pixel mask.
5. t
BWC
: Block write minimum cycle time.
DQ(CL2)
DQ(CL3)
t
CCD Note 2
t
CDL
Note 3
Note 4
t
BWC
Note 5
Note 4
Note 2
3. CAS Interrupt (I)
1) Read interrupted by Read (BL=4)
Note 1
CLK
CMD
ADD
2) Write interrupted by(Block) Write (BL=2)
3) Write interrupted by Read (BL=2)
DQ(CL2)
DQ(CL3)
4) Block Write to Block Write
CLK
CMD
ADD
DQ
RD
RD
A
B
QA
0
QA
0
QB
0
QB
0
QB
1
QB
2
QB
3
QB
1
QB
2
QB
3
t
CCD
A
B
C
D
WR
WR
WR
BW
DA
0
DB
0
DB
1
DC
0
Pixel
DA
0
DA
0
QB
0
QB
1
QB
0
QB
1
A
B
WR
RD
A
B
Pixel
Pixel
BW
BW
*Note :
CLK
CMD
ADD
DQ
相關(guān)PDF資料
PDF描述
KM4132G271BTQ(R)-7 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271BTQ(R)-8 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271B 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271BQ(R)-10 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271BQ(R)-7 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM4132G271BTQR-10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271BTQR-7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271BTQR-8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271Q10 制造商:SAMSUNG 功能描述:*
KM4132G51207 制造商:SAMSUNG 功能描述:New